Cite
HARVARD Citation
Termo, G. et al. (2023). Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID. Journal of instrumentation. p. . [Online].
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Termo, G. et al. (2023). Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID. Journal of instrumentation. p. . [Online].