Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID. (1st January 2023)

• Record Type: Journal Article
• Authors: Termo, G.; Borghello, G.; Faccio, F.; Michelis, S.; Koukab, A.; Sallese, J.-M.
• Is Part Of: Journal of instrumentation. Volume 18:Number 1(2023)
• Publication Date: 2023-01-01
• Subjects: Radiation damage to electronic components -- Radiation-hard electronics -- Inspection with X-rays -- Models and simulations; Scientific apparatus and instruments -- Periodicals; 502.84
• DOI: 10.1088/1748-0221/18/01/C01061
• Languages: English
• ISSNs: 1748-0221

Abstract

Abstract: The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over time. As of 2014, 22 chips from 3 different fabs in 130 nm CMOS technology and 11 chips from 2 different fabs in 65 nm CMOS technology have been irradiated to ultra-high doses, ranging from 100 Mrad(SiO2 ) to 1 Grad(SiO2 ). This unprecedented monitoring effort revealed significant fab-to-fab and run-to-run variability, both dependent on the characteristics of the MOS transistors.