Corrigendum to "Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep cryogenic temperatures" [Solid State Electron. 193 (2022) 108291]. (January 2023) - Catapano, E.; Aprà, A.; Cassé, M.; Gaillard, F.; de Franceschi, S.; Meunier, T.; Vinet, M.; Ghibaudo, G.