Corrigendum to "TCAD simulations of FDSOI devices down to deep cryogenic temperature" [Solid-State Electron. 194 (2022) 108319]. (January 2023) - Catapano, E.; Cassé, M.; Gaillard, F.; de Franceschi, S.; Meunier, T.; Vinet, M.; Ghibaudo, G.