Cite
HARVARD Citation
Zhang, X. et al. (2022). Single-event burnout hardening of RC-IGBT with the raised N-buffer layer. Microelectronics and reliability. p. . [Online].
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Zhang, X. et al. (2022). Single-event burnout hardening of RC-IGBT with the raised N-buffer layer. Microelectronics and reliability. p. . [Online].