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APA Citation
Xing, P., Wang, F., Luo, P., Sun, R., Shi, Y., Xu, X., Chen, Y., & Chen, W. (2022). a High Reverse Breakdown Voltage p-GaN Gate HEMT with Field Control Drain. ECS journal of solid state science and technology, 11, . http://access.bl.uk/ark:/81055/vdc_100161687020.0x000005