A High Reverse Breakdown Voltage p-GaN Gate HEMT with Field Control Drain. (1st August 2022)
- Record Type:
- Journal Article
- Title:
- A High Reverse Breakdown Voltage p-GaN Gate HEMT with Field Control Drain. (1st August 2022)
- Main Title:
- A High Reverse Breakdown Voltage p-GaN Gate HEMT with Field Control Drain
- Authors:
- Xing, Pengcheng
Wang, Fangzhou
Luo, Pan
Sun, Ruize
Shi, Yijun
Xu, Xinbing
Chen, Yiqiang
Chen, Wanjun - Abstract:
- Abstract : In this work, a high reverse blocking voltage ( BV R ) p-GaN gate high electron mobility transistor with field control drain (FCD-HEMT) has been proposed and fabricated. The FCD-HEMT features the field control drain (FCD), consisting of electrically shorted Ohmic contact structure and p-GaN cap. In the OFF-state, the 2-Dimensional Electron Gas (2DEG) channel is cut off due to the p-GaN cap introduced field control, which provides FCD-HEMT with reverse blocking capability. In the ON-state, the re-formed 2DEG channel offers a non-potential barrier pathway for electrons transfer from source to drain and ensures a low resistance of the FCD-HEMT. The fabricated device exhibits 1400 V forward breakdown voltage ( BV F ) and −1240 V reverse breakdown voltage ( BV R ), 12.7 mΩ·cm 2 low specific ON-resistance, and 188 mA mm −1 max drain current while maintaining normally-OFF capability. These results demonstrate the great potential of FCD-HEMTs in 1200 V-class power applications.
- Is Part Of:
- ECS journal of solid state science and technology. Volume 11:Number 8(2022)
- Journal:
- ECS journal of solid state science and technology
- Issue:
- Volume 11:Number 8(2022)
- Issue Display:
- Volume 11, Issue 8 (2022)
- Year:
- 2022
- Volume:
- 11
- Issue:
- 8
- Issue Sort Value:
- 2022-0011-0008-0000
- Page Start:
- Page End:
- Publication Date:
- 2022-08-01
- Subjects:
- Solid state chemistry -- Periodicals
Electronics -- Materials -- Periodicals
Electrochemistry -- Periodicals
541.0421 - Journal URLs:
- https://iopscience.iop.org/journal/2162-8777 ↗
http://www.electrochem.org/ ↗ - DOI:
- 10.1149/2162-8777/ac869f ↗
- Languages:
- English
- ISSNs:
- 2162-8777
- Deposit Type:
- Legaldeposit
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- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 23552.xml