Cite
HARVARD Citation
Xing, P. et al. (2022). A High Reverse Breakdown Voltage p-GaN Gate HEMT with Field Control Drain. ECS journal of solid state science and technology. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Xing, P. et al. (2022). A High Reverse Breakdown Voltage p-GaN Gate HEMT with Field Control Drain. ECS journal of solid state science and technology. p. . [Online].