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MLA Citation
Agata Piacentini et al.. “Stable Al2O3 Encapsulation of MoS2‐FETs Enabled by CVD Grown h‐BN.” Advanced Electronic Materials, vol. 8, 2022, p. n/a. http://access.bl.uk/ark:/81055/vdc_100164968920.0x00000d
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Agata Piacentini et al.. “Stable Al2O3 Encapsulation of MoS2‐FETs Enabled by CVD Grown h‐BN.” Advanced Electronic Materials, vol. 8, 2022, p. n/a. http://access.bl.uk/ark:/81055/vdc_100164968920.0x00000d