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APA Citation
Piacentini, A., Marian, D., Schneider, D. S., González Marín, E., Wang, Z., Otto, M., Canto, B., Radenovic, A., Kis, A., Fiori, G., Lemme, M. C., & Neumaier, D. (2022). stable Al2O3 Encapsulation of MoS2‐FETs Enabled by CVD Grown h‐BN. Advanced Electronic Materials, 8, n/a. http://access.bl.uk/ark:/81055/vdc_100164968920.0x00000d