Cite
HARVARD Citation
Piacentini, A. et al. (2022). Stable Al2O3 Encapsulation of MoS2‐FETs Enabled by CVD Grown h‐BN. Advanced Electronic Materials. p. n/a. [Online].
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Piacentini, A. et al. (2022). Stable Al2O3 Encapsulation of MoS2‐FETs Enabled by CVD Grown h‐BN. Advanced Electronic Materials. p. n/a. [Online].