Cite
MLA Citation
Liangliang Cao et al.. “Advantage of Ti-Doped Ge2Sb2Te5 Material for Phase Change Memory Applications.” ECS Solid State Letters, vol. 4, 2015, pp. P102–P104. http://access.bl.uk/ark:/81055/vdc_100160140990.0x000010
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Liangliang Cao et al.. “Advantage of Ti-Doped Ge2Sb2Te5 Material for Phase Change Memory Applications.” ECS Solid State Letters, vol. 4, 2015, pp. P102–P104. http://access.bl.uk/ark:/81055/vdc_100160140990.0x000010