Advantage of Ti-Doped Ge2Sb2Te5 Material for Phase Change Memory Applications. (1st January 2015)

• Record Type: Journal Article
• Authors: Cao, Liangliang; Ji, Xinglong; Zhu, Wenqing; She, Qiumin; Chen, Yan; Hu, Zhigao; Guo, Shuang; Song, Zhitang; Rao, Feng; Qian, Bo; Wu, Liangcai
• Is Part Of: ECS Solid State Letters. Volume 4:Number 12(2015)
• Page Start: P102
• Page End: P104
• Publication Date: 2015-01-01
• Subjects: high thermal stability -- low power consumption -- phase change memory
• DOI: 10.1149/2.0081512ssl
• Languages: English
• ISSNs: 2162-8750

Abstract

Abstract : Ti-doped Ge2 Sb2 Te5 (GSTT) materials have been investigated for phase change memory (PCM) applications. Compared with GST, GSTT5.67% phase change material has a higher crystallization temperature (∼230°C), a higher crystallization activation energy (2.79 eV) and a better data retention ability (∼134°C for 10-year). The PCM cell based on GSTT5.67% exhibits lower power consumption than GST based one. Endurance up to 1 × 10 4 cycles with high/low resistance ratio of over one order of magnitude has been achieved.