Cite
MLA Citation
Yu-Ru Lin et al.. “Artificial Defects in Si3N4 Enhance Nonvolatile Memory Performance of Ultra-Thin Body Poly-Si Junctionless Field-Effect Transistors.” ECS journal of solid state science and technology, vol. 5, 2016, pp. P3202–P3205. http://access.bl.uk/ark:/81055/vdc_100160140183.0x000012