Artificial Defects in Si3N4 Enhance Nonvolatile Memory Performance of Ultra-Thin Body Poly-Si Junctionless Field-Effect Transistors. (1st January 2016)

• Record Type: Journal Article
• Authors: Lin, Yu-Ru; Wang, Wei-Cheng; Chen, Lun-Chun; Wu, Yung-Chun
• Is Part Of: ECS journal of solid state science and technology. Volume 5:Number 4(2016)
• Page Start: P3202
• Page End: P3205
• Publication Date: 2016-01-01
• Subjects: junctionless FET -- SONOS -- ultra-thin body; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0271604jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : This work presents a trench structure with n-type and p-type junctionless field-effect transistor (JL-FET) based on ultra-thin body (UTB) nonvolatile memory (NVM) devices with double stacked Si3 N4 defect charge trapping layers (NN-CTLs). The n-type device exhibits excellent memory characteristics, including high program/erase (P/E) speed, good endurance (>10 4 cycles) and excellent (10-year) data retention at 85°C which achieve memory industry requirement. This simple double stacked Si3 N4 trench JL-FET structure provides extra deep charge trapping sites in CTL, which improves the performance of JL-SONNOS NVMs for 3D NAND flash applications.