Cite
MLA Citation
A. Y. Polyakov et al.. “Deep Electron Traps Responsible for Higher Quantum Efficiency in Improved GaN/InGaN Light Emitting Diodes Embedded with SiO2 Nanoparticles.” ECS journal of solid state science and technology, vol. 5, 2016, pp. Q274–Q277. http://access.bl.uk/ark:/81055/vdc_100160139637.0x00000b