Deep Electron Traps Responsible for Higher Quantum Efficiency in Improved GaN/InGaN Light Emitting Diodes Embedded with SiO2 Nanoparticles. (1st January 2016)

• Record Type: Journal Article
• Authors: Polyakov, A. Y.; Smirnov, N. B.; Yakimov, E. B.; Cho, Han-Su; Baek, Jong Hyeob; Turutin, A. V.; Shemerov, I. V.; Kondratyev, E. S.; Lee, In-Hwan
• Is Part Of: ECS journal of solid state science and technology. Volume 5:Number 10(2016)
• Page Start: Q274
• Page End: Q277
• Publication Date: 2016-01-01
• Subjects: Defect characterization -- Electrical properties -- GaN -- LED -- Quantum efficiency; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0051612jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : Deep traps spectra are compared for GaN/InGaN light emitting diodes with and without a template embedded with SiO2 nanoparticles underlying the active multiple quantum well region. The structures with SiO2 nanoparticles show a higher internal quantum efficiency which correlates with a lower concentration of deep traps with level near Ec -0.6 eV as compared to reference structures. We discuss complications in deep traps analysis coming from the freeze-out of Mg acceptors and the choice of proper biasing conditions for deep traps spectra analysis.