Cite
HARVARD Citation
Kita, K. et al. (2019). (Invited) Design of SiO2/4H-SiC Formation Process with H2O Annealing to Improve MOSFET Performance. ECS transactions. pp. 195-200. [Online].
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Kita, K. et al. (2019). (Invited) Design of SiO2/4H-SiC Formation Process with H2O Annealing to Improve MOSFET Performance. ECS transactions. pp. 195-200. [Online].