(Invited) Design of SiO2/4H-SiC Formation Process with H2O Annealing to Improve MOSFET Performance. (3rd July 2019)

• Record Type: Journal Article
• Authors: Kita, Koji; Hirai, Hirohisa; Nishida, Mizuki; Sakuta, Ryota
• Is Part Of: ECS transactions. Volume 92:Number 4(2019)
• Page Start: 195
• Page End: 200
• Publication Date: 2019-07-03
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09204.0195ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : To understand the reason for the significantly different 4H-SiC MOS characteristics between O2 -oxidized and H2 O-oxidized interfaces, the physical characterization of thermal SiO2 structures grown in different oxidants was conducted especially focusing on the near-interface region. Based on the analysis, we investigated the impacts of H2 O-annealing after conventional dry-O2 -oxidation to grow an ultrathin interface layer, from the view point of NMOSFET channel mobility enhancement. Such process was found to be applicable even after a conventional interface passivation process of NO annealing. In addition, reduction of the oxygen partial pressure in H2 O-annealing was found to be crucial to suppress the introduction of electron traps in the oxide film by H2 O-annealing of SiC.