Cite
MLA Citation
Tongyang Wang et al.. “A novel 3300 V trench IGBT with P-N-doped polysilicon split gate for low EMI noise.” Semiconductor science and technology, vol. 37, 2022, p. . http://access.bl.uk/ark:/81055/vdc_100157248042.0x000055
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Tongyang Wang et al.. “A novel 3300 V trench IGBT with P-N-doped polysilicon split gate for low EMI noise.” Semiconductor science and technology, vol. 37, 2022, p. . http://access.bl.uk/ark:/81055/vdc_100157248042.0x000055