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APA Citation
Wang, T., Li, Z., Zhao, Y., Li, L., Yang, Y., Xia, Z., Ren, M., Li, W., & Zhang, J. (2022). a novel 3300 V trench IGBT with P-N-doped polysilicon split gate for low EMI noise. Semiconductor science and technology, 37, . http://access.bl.uk/ark:/81055/vdc_100157248042.0x000055