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HARVARD Citation
Wang, T. et al. (2022). A novel 3300 V trench IGBT with P-N-doped polysilicon split gate for low EMI noise. Semiconductor science and technology. p. . [Online].
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Wang, T. et al. (2022). A novel 3300 V trench IGBT with P-N-doped polysilicon split gate for low EMI noise. Semiconductor science and technology. p. . [Online].