Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs. (1st March 2022)

• Record Type: Journal Article
• Authors: Bi, Lan; Yao, Yixu; Jiang, Qimeng; Huang, Sen; Wang, Xinhua; Jin, Hao; Dai, Xinyue; Xu, Zhengyuan; Fan, Jie; Yin, Haibo; Wei, Ke; Liu, Xinyu
• Is Part Of: Journal of semiconductors. Volume 43:Number 3(2022)
• Publication Date: 2022-03-01
• Subjects: AlGaN/GaN MIS-HEMTs -- enhancement-mode -- T-shape gate -- parasitic capacitance -- trapping/de-trapping -- capacitance-voltage hysteresis; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/43/3/032801
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: Parasitic capacitances associated with overhangs of the T-shape-gate enhancement-mode (E-mode) GaN-based power device, were investigated by frequency/voltage-dependent capacitance–voltage and inductive-load switching measurements. The overhang capacitances induce a pinch-off voltage distinguished from that of the E-mode channel capacitance in the gate capacitance and the gate–drain capacitance characteristic curves. Frequency- and voltage-dependent tests confirm the instability caused by the trapping of interface/bulk states in the LPCVD-SiN x passivation dielectric. Circuit-level double pulse measurement also reveals its impact on switching transition for power switching applications.