Cite
HARVARD Citation
Bi, L. et al. (2022). Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs. Journal of semiconductors. p. . [Online].
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Bi, L. et al. (2022). Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs. Journal of semiconductors. p. . [Online].