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APA Citation
Ozaki, S., Yaita, J., Yamada, A., Minoura, Y., Ohki, T., Okamoto, N., Nakamura, N., & Kotani, J. (2022). surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility Transistors Using Al2O3‐Based Insulated‐Gate Structures with H2O Vapor Pretreatment. Physica status solidi, 219(7), n/a. http://access.bl.uk/ark:/81055/vdc_100153428493.0x00000e