Cite
MLA Citation
Maxime Legallais et al.. “Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors.” Advanced materials interfaces, vol. 9, no. 5, 2022, p. n/a. http://access.bl.uk/ark:/81055/vdc_100152280689.0x000009