Cite
APA Citation
Legallais, M., Lefevre, G., Martin, S., Labau, S., Bassani, F., Pélissier, B., Baron, T., Vauche, L., Le Royer, C., Charles, M., Vandendaele, W., Plissonnier, M., Gwoziecki, R., & Salem, B. (2022). impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors. Advanced materials interfaces, 9(5), n/a. http://access.bl.uk/ark:/81055/vdc_100152280689.0x000009