Cite
HARVARD Citation
Legallais, M. et al. (2022). Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors. Advanced materials interfaces. 9 (5), p. n/a. [Online].
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Legallais, M. et al. (2022). Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors. Advanced materials interfaces. 9 (5), p. n/a. [Online].