Cite
MLA Citation
Koji Kita et al.. “Minimization of SiO2/4H-SiC (0001) Interface State Density by Low-Temperature Post-Oxidation-Annealing in Wet Ambient after Nitrogen Passivation.” ECS transactions, vol. 86, 2018, pp. 61–65. http://access.bl.uk/ark:/81055/vdc_100116293332.0x00000e