Minimization of SiO2/4H-SiC (0001) Interface State Density by Low-Temperature Post-Oxidation-Annealing in Wet Ambient after Nitrogen Passivation. (20th July 2018)

• Record Type: Journal Article
• Authors: Kita, Koji; Nishida, Mizuki; Sakuta, Ryota; Hirai, Hirohisa
• Is Part Of: ECS transactions. Volume 86:Number 2(2018)
• Page Start: 61
• Page End: 65
• Publication Date: 2018-07-20
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08602.0061ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : The MOS interface with minimized interface state density and less near-interface oxide traps was demonstrated on 4H-SiC (0001) by the sequential combination of two kinds of annealing processes after conventional dry oxidation: the post-oxidation annealing in NO ambient and the post-nitridation annealing in H2 O ambient at low temperature. The H2 O annealing conditions should be tuned to limit the amount of the additional growth of SiO2 to <1 ML to minimize the interface defect density.