Cite
HARVARD Citation
Kita, K. et al. (2018). Minimization of SiO2/4H-SiC (0001) Interface State Density by Low-Temperature Post-Oxidation-Annealing in Wet Ambient after Nitrogen Passivation. ECS transactions. pp. 61-65. [Online].
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Kita, K. et al. (2018). Minimization of SiO2/4H-SiC (0001) Interface State Density by Low-Temperature Post-Oxidation-Annealing in Wet Ambient after Nitrogen Passivation. ECS transactions. pp. 61-65. [Online].