Enhancement-mode thin film transistor using amorphous phosphorus-doped Indium–Zinc–Tin-Oxide channel layer. (January 2022)

• Record Type: Journal Article
• Authors: Yang, Hui; Yang, Weiguang; Su, Jinbao; Zhang, Xiqing
• Is Part Of: Materials science in semiconductor processing. Volume 137(2022)
• Publication Date: 2022-01
• Subjects: a-IZTO:P -- Amorphous oxide semiconductor -- Radio frequency magnetron sputtering -- Thin film transistor -- Bias stress stability; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2021.106228
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: In this research, we investigated optical properties of amorphous Phosphorus-doped Indium–Zinc–Tin-Oxide (a-IZTO:P) thin films and their feasibility as the channel layer for thin film transistors (TFTs). The a-IZTO:P TFT with bottom-gate top-contact structure was prepared on silicon substrates by radio frequency (RF) magnetron sputtering at room temperature. After annealing in air at 350 °C, the IZTO:P films kept amorphous and showed good optical transmittance of over 80% within the visible range. The a-IZTO:P TFT operated in enhancement-mode and exhibited promising electrical performance with saturation mobility ( μ SAT ) of 34.6 cm 2 /V∙s, threshold voltage ( V TH ) of 0.8 V, subthreshold swing ( SS ) of 0.53 V/decade and on/off current ratio ( I ON /I OFF ) of 4.88 × 10 8 . In addition, the stability of a-IZTO:P TFTs was also investigated.