Cite
HARVARD Citation
Yang, H. et al. (2022). Enhancement-mode thin film transistor using amorphous phosphorus-doped Indium–Zinc–Tin-Oxide channel layer. Materials science in semiconductor processing. p. . [Online].
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Yang, H. et al. (2022). Enhancement-mode thin film transistor using amorphous phosphorus-doped Indium–Zinc–Tin-Oxide channel layer. Materials science in semiconductor processing. p. . [Online].