Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence. Issue 12 (December 2015)
- Record Type:
- Journal Article
- Title:
- Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence. Issue 12 (December 2015)
- Main Title:
- Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence
- Authors:
- Brazzini, Tommaso
Casbon, Michael A.
Sun, Huarui
Uren, Michael J.
Lees, Jonathan
Tasker, Paul J.
Jung, Helmut
Blanck, Hervé
Kuball, Martin - Abstract:
- Abstract: Electroluminescence microscopy and spectroscopy have been used to investigate hot electron concentration and electron temperature during RF operation. Two modes of operation were chosen, Class B and Class J, and compared with DC conditions. Hot electron concentration and temperature were on average lower for both RF modes than under comparative DC conditions. While these average values suggest that degradation due exclusively to hot electrons may be lower for RF than for DC conditions, the peak values in EL intensity and electric field along dynamic load lines have also to be taken into account and these are higher under Class J than Class B. Highlights: Electroluminescence is a good indicator for average hot electron contributions during operation Under RF (Class B and Class J), on average hot electrons have a lower impact compared to DC Peak values might be important in the degradation mechanism Field-driven degradation could be important but not detectable with Electroluminescence, possibly higher under Class J
- Is Part Of:
- Microelectronics and reliability. Volume 55:Issue 12 Part A(2015)
- Journal:
- Microelectronics and reliability
- Issue:
- Volume 55:Issue 12 Part A(2015)
- Issue Display:
- Volume 55, Issue 12, Part 1 (2015)
- Year:
- 2015
- Volume:
- 55
- Issue:
- 12
- Part:
- 1
- Issue Sort Value:
- 2015-0055-0012-0001
- Page Start:
- 2493
- Page End:
- 2498
- Publication Date:
- 2015-12
- Subjects:
- Microwave field-effect transistor (FETs) -- AlGaN/GaN -- Electroluminescence -- Class B -- Class J -- RF degradation -- Hot-electrons -- Electron temperature
Electronic apparatus and appliances -- Reliability -- Periodicals
Miniature electronic equipment -- Periodicals
Appareils électroniques -- Fiabilité -- Périodiques
Équipement électronique miniaturisé -- Périodiques
Electronic apparatus and appliances -- Reliability
Miniature electronic equipment
Periodicals
621.3815 - Journal URLs:
- http://www.sciencedirect.com/science/journal/00262714 ↗
http://www.elsevier.com/journals ↗
http://www.elsevier.com/homepage/elecserv.htt ↗ - DOI:
- 10.1016/j.microrel.2015.09.023 ↗
- Languages:
- English
- ISSNs:
- 0026-2714
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5758.979000
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 19359.xml