Cite
HARVARD Citation
Brazzini, T. et al. (2015). Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence. Microelectronics and reliability. 55 (12), pp. 2493-2498. [Online].
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Brazzini, T. et al. (2015). Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence. Microelectronics and reliability. 55 (12), pp. 2493-2498. [Online].