Cite
APA Citation
Bisi, D., Stocco, A., Rossetto, I., Meneghini, M., Rampazzo, F., Chini, A., Soci, F., Pantellini, A., Lanzieri, C., Gamarra, P., Lacam, C., Tordjman, M., di Forte-Poisson, M., De Salvador, D., Bazzan, M., Meneghesso, G., & Zanoni, E. (2015). effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs. Microelectronics and reliability, 55(9), 1662–1666. http://access.bl.uk/ark:/81055/vdc_100051243578.0x000056