Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs. Issue 9 (August 2015)

• Record Type: Journal Article
• Authors: Bisi, D.; Stocco, A.; Rossetto, I.; Meneghini, M.; Rampazzo, F.; Chini, A.; Soci, F.; Pantellini, A.; Lanzieri, C.; Gamarra, P.; Lacam, C.; Tordjman, M.; di Forte-Poisson, M.-A.; De Salvador, D.; Bazzan, M.; Meneghesso, G.; Zanoni, E.
• Is Part Of: Microelectronics and reliability. Volume 55:Issue 9/10(2015)
• Page Start: 1662
• Page End: 1666
• Publication Date: 2015-08
• Subjects: GaN -- HEMT -- RF -- Buffer -- Iron -- Carbon -- Short-channel -- Trapping -- Reliability; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2015.06.038
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: The effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs have been studied by means of static and dynamic I–V measurements, drain-current transient spectroscopy, XRD, and RF stress tests. Devices equipped with C-doped and Fe-doped GaN buffer feature improved subthreshold behaviour (lower source-to-drain leakage current, and lower DIBL) and improved RF reliability. As a drawback, devices equipped with Fe- and C-doping experience higher dynamic current dispersion, ascribed to higher concentration of the deep levels E2 (0.56 eV/10 − 15 cm 2 ) and E4 (0.84 eV/10 − 14 cm 2 ). Highlights: Buffer compensation studied by means of static and dynamic I-V, DCTS, XRD, and rf stress tests. Devices equipped with C-doped and Fe-doped GaN buffer feature improved subthreshold behaviour and improved RF reliability. Devices equipped with Fe- and C-doping experience higher dynamic current dispersion.