Real time evaluation of silicon epitaxial growth process by exhaust gas measurement using quartz crystal microbalance. (December 2018)

• Record Type: Journal Article
• Authors: Muroi, Mitsuko; Matsuo, Miya; Habuka, Hitoshi; Ishida, Yuuki; Ikeda, Shin-Ichi; Hara, Shiro
• Is Part Of: Materials science in semiconductor processing. Volume 88(2018)
• Page Start: 192
• Page End: 197
• Publication Date: 2018-12
• Subjects: Quartz crystal microbalance -- Silicon epitaxial growth -- Minimal Fab -- in situ monitor; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2018.08.014
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: A silicon epitaxial growth process in a trichlorosilane-hydrogen system was evaluated using a quartz crystal microbalance (QCM) placed at the exhaust of a chemical vapor deposition reactor designed for the Minimal Fab. The QCM showed two types of the frequency decrease behaviors, that is, i ) a quick shift due to the gas property change caused by the trichlorosilane gas introduction into the ambient hydrogen and ii ) the continuous and gradual decrease due to the byproduct deposition on the QCM surface during the silicon epitaxial growth. Because both i ) and ii ) showed a relationship with the silicon epitaxial growth rate, the in-situ information obtained by the QCM was expected for the real time monitoring of the film deposition process.