Cite
HARVARD Citation
Muroi, M. et al. (2018). Real time evaluation of silicon epitaxial growth process by exhaust gas measurement using quartz crystal microbalance. Materials science in semiconductor processing. pp. 192-197. [Online].
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Muroi, M. et al. (2018). Real time evaluation of silicon epitaxial growth process by exhaust gas measurement using quartz crystal microbalance. Materials science in semiconductor processing. pp. 192-197. [Online].