Insights into the off-state breakdown mechanisms in power GaN HEMTs. (September 2019)

• Record Type: Journal Article
• Authors: Zagni, N.; Puglisi, F.M.; Pavan, P.; Chini, A.; Verzellesi, G.
• Is Part Of: Microelectronics and reliability. Volume 100/101(2019)
• Publication Date: 2019-09
• Subjects: Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2019.06.066
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: We analyze the off-state, three-terminal, lateral breakdown in AlGaN/GaN HEMTs for power switching applications by comparing two-dimensional numerical device simulations with experimental data from device structures with different gate-to-drain spacing and with either undoped or Carbon-doped GaN buffer layer. Our simulations reproduce the different breakdown-voltage dependence on the gate-drain-spacing exhibited by the two types of device and attribute the breakdown to: i ) a combination of gate electron injection and source-drain punch-through in the undoped HEMTs; and ii ) avalanche generation triggered by gate electron injection in the C-doped HEMTs.