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MLA Citation
Hao Fu et al.. “1200V 4H-SiC trench MOSFET with superior figure of merit and suppressed quasi-saturation effect.” Microelectronics and reliability, vol. 123, 2021, p. . http://access.bl.uk/ark:/81055/vdc_100136722933.0x00004e
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Hao Fu et al.. “1200V 4H-SiC trench MOSFET with superior figure of merit and suppressed quasi-saturation effect.” Microelectronics and reliability, vol. 123, 2021, p. . http://access.bl.uk/ark:/81055/vdc_100136722933.0x00004e