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APA Citation
Fu, H., Wei, Z., Liu, S., Wei, J., Xu, H., Ni, L., Yang, Z., & Sun, W. (2021). 1200V 4H-SiC trench MOSFET with superior figure of merit and suppressed quasi-saturation effect. Microelectronics and reliability, 123, . http://access.bl.uk/ark:/81055/vdc_100136722933.0x00004e