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Fu, H. et al. (2021). 1200V 4H-SiC trench MOSFET with superior figure of merit and suppressed quasi-saturation effect. Microelectronics and reliability. p. . [Online].
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Fu, H. et al. (2021). 1200V 4H-SiC trench MOSFET with superior figure of merit and suppressed quasi-saturation effect. Microelectronics and reliability. p. . [Online].