STT-MTJ Based Smart Implication for Energy-Efficient Logic-in-Memory Computing. (October 2021)

• Record Type: Journal Article
• Authors: De Rose, Raffaele; Zanotti, Tommaso; Puglisi, Francesco Maria; Crupi, Felice; Pavan, Paolo; Lanuzza, Marco
• Is Part Of: Solid-state electronics. Volume 184(2021)
• Publication Date: 2021-10
• Subjects: STT-MTJ -- Logic-in-memory -- Material implication -- Compact modeling -- SIMPLY; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2021.108065
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Spin-transfer torque magnetic tunnel junction (STT-MTJ) for logic-in-memory (LIM) Smart material implication (SIMPLY) LIM scheme based on nanoscale STT-MTJs. More energy-efficient and reliable operation with SIMPLY against conventional IMPLY. Abstract: Spin-transfer torque magnetic tunnel junction (STT-MTJ) technology is an attractive solution for designing non-volatile Logic-in-Memory (LIM) architectures. This work explores a smart material implication (SIMPLY) LIM scheme based on nanoscale STT-MTJs. The SIMPLY architecture is benchmarked against the conventional material implication (IMPLY) logic. Obtained results prove that for similar performance the STT-MTJ based SIMPLY scheme ensures more reliable operation (i.e., lower error rate by more than three orders of magnitude) and an energy saving of −70% than its IMPLY counterpart, at the only cost of minimal area overhead.