STT-MTJ Based Smart Implication for Energy-Efficient Logic-in-Memory Computing. (October 2021) - De Rose, Raffaele
Highlights: Spin-transfer torque magnetic tunnel junction (STT-MTJ) for logic-in-memory (LIM) Smart material implication (SIMPLY) LIM scheme based on nanoscale STT-MTJs. More energy-efficient and reliable operation with SIMPLY against conventional IMPLY. Abstract: Spin-transfer torque magnetic tunnel junction (STT-MTJ) technology is an attractive solution for designing non-volatile Logic-in-Memory (LIM) architectures. This work explores a smart material implication (SIMPLY) LIM scheme based on nanoscale STT-MTJs. The SIMPLY architecture is benchmarked against the conventional material implication (IMPLY) logic. Obtained results prove that for similar performance the STT-MTJ based SIMPLY scheme ensures more reliable operation (i.e., lower error rate by more than three orders of magnitude) and an energy saving of −70% than its IMPLY counterpart, at the only cost of minimal area overhead.