Enhancing gate turn-off thyristor blocking characteristics by low temperature defect passivation technology. (30th June 2021)

• Record Type: Journal Article
• Authors: Wu, Pei-Yu; Chen, Min-Chen; Chang, Ting-Chang; Zheng, Hao-Xuan; Jin, Fu-Yuan; Tan, Yung-Fang; Tu, Yu-Fa; Tsai, Xin-Ying; Huang, Jen-Wei; Chang, Kuo-Jen; Liu, Guan-Shian; Tsai, Tsung-Ming
• Is Part Of: Semiconductor science and technology. Volume 36:Number 8(2021)
• Publication Date: 2021-06-30
• Subjects: silicon controlled rectifier (SCR) -- gate turn-off thyristor (GTO thyristor) -- supercritical fluid -- hydridation; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/ac0b9b
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: In the past, gate turn-off (GTO) thyristors were commonly used to either increase the length of the drift region or reduce the doping concentration to increase high-voltage and high-power applications. However, this results in an on-resistance ( R on ) increase. In this study, we applied a supercritical fluid (SCF) treatment to devices which has the advantage of high permeability and low-temperature processing to passivate SiC-GTO bulk defects. After the proposed defect passivation, the breakdown voltage has been improved by 8% without increasing on-state resistance. In addition, the leakage current has also been suppressed more than 30% in average. This study also uses electrical analysis to understand the characteristics of the devices after SCF treatment, and then discusses the passivation mechanism of materials of the devices from this treatment.