Cite
HARVARD Citation
Wu, P. et al. (2021). Enhancing gate turn-off thyristor blocking characteristics by low temperature defect passivation technology. Semiconductor science and technology. p. . [Online].
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Wu, P. et al. (2021). Enhancing gate turn-off thyristor blocking characteristics by low temperature defect passivation technology. Semiconductor science and technology. p. . [Online].