Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors. (September 2021) - Glória Caño de Andrade, Maria
Graphical abstract: Highlights: HEMTs on 200 mm Si wafers using Au-free processing in standard Si CMOS tools. The Low frequency noise were performed on AlGaN/GaN HEMTs at different temperatures. The Low frequency noise were performed on AlGaN/GaN HEMTs at different temperatures. There are GR centers in the proximity of the GaN channel of the AlGaN/GaN HEMTs. Abstract: In this paper, the noise Power Spectral Density (PSD) of AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) has been experimentally investigated in linear operation (VD = 50 mV) for different channel lengths (L) and widths (W) at different temperatures (5.32 °C till 100 °C). The origin of the noise will be analyzed to understand the physical mechanisms involved. It is shown that the Low-Frequency (LF) noise is dominated by 1/f noise, originating from number fluctuations. Additionally, in shorter devices, a higher 1/f noise PSD is found. The LF noise characteristics indicate that the AlGaN/GaN HEMTs on silicon substrates can be a promising candidate for analog and Radio Frequency applications (RF).