12.5 A/350 V AlGaN/GaN‐on‐Si MOS‐HEMT with low specific on‐resistance and minimal threshold hysteresis. Issue 18 (1st August 2014) - Liu, Shuang
Abstract : An AlGaN/GaN metal–oxide semiconductor (MOS) high‐electron mobility transistor (HEMT) on silicon substrate was obtained with 8 nm Al2 O3 gate dielectric films grown using atomic layer deposition. The MOS‐HEMT shows a low specific on‐resistance of 0.57 Ω·mm 2, a large maximum saturate drain current of 12.5 A and a minimal threshold hysteresis of 0.05 V. Low specific on‐resistance, large maximum saturate drain current and minimal threshold hysteresis show that the fabricated MOS‐HEMT is very suitable for power switching applications.