Cite
HARVARD Citation
Liu, S. et al. (2014). 12.5 A/350 V AlGaN/GaN‐on‐Si MOS‐HEMT with low specific on‐resistance and minimal threshold hysteresis. Electronics letters. 50 (18), pp. 1322-1324. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Liu, S. et al. (2014). 12.5 A/350 V AlGaN/GaN‐on‐Si MOS‐HEMT with low specific on‐resistance and minimal threshold hysteresis. Electronics letters. 50 (18), pp. 1322-1324. [Online].